4.8 Article

Efficient Solvent-Assisted Post-Treatment for Molecular Rearrangement of Sprayed Polymer Field-Effect Transistors

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 1, Pages 214-221

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/am201274s

Keywords

organic thin film transistor; spray deposition; solvent assisted treatment; poly(3-hexylthiophene); molecular packing

Funding

  1. National Research Foundation of Korea (NRF) [2011-0016177]
  2. Ministry of Education, Science, and Technology [2011-0008698]
  3. Korea Research Council of Fundamental Science & Technology (KRCF)
  4. KIST

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Polymer-based field-effect transistors are fabricated using the gas-assisted spray technique, and their performance is considerably improved when a solvent-assisted post-treatment method, solvent sprayed overlayer (SSO), is used. The SSO method is a unique treatment that can facilitate chain packing to increase crystallinity within the sprayed polymer layers, which inherently have a kinetically trapped amorphous chain morphology with lack of crystallinity due to rapid solvent evaporation. The device performance was drastically improved after SSO relative to conventional post-treatment, thermal annealing (TA). This occurred because SSO can rearrange the polymer chains into a dominantly edge-on crystal orientation, which is preferential for charge transport, whereas TA increases the crystallinity without rearrangement of the crystal orientation resulting in a complex of edge-on and face-on. The development of edge-on crystal domains after SSO within the active layers was responsible for the significant improvement in performance. The SSO is a simple and effective post-treatment method that validates the use of spray process and holds promise for use in other high-throughput processes for OFETs fabrication.

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