Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 3, Issue 10, Pages 4120-4125Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am201010h
Keywords
diamond films; laser-assisted combustion synthesis; laser-induced resonant excitation; Raman spectroscopy; residual stress
Funding
- U.S. Office of Naval Research (ONR) through the Multidisciplinary University Research Initiative (MURI) [N00014-05-1-0432, N00014-09-1-0943]
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Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.
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