Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 29, Issue 4, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3607600
Keywords
chemical analysis; etching; gallium compounds; III-V semiconductors; indium compounds; photoluminescence; semiconductor quantum wells
Funding
- U.S. Joint Technology Office Multidisciplinary Research Initiative [AFOSR FA9550-07-1-0573]
- Optoelectronics Research Center (at CHTM) [AFOSR FA9550-09-1-0202]
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The authors investigate the etch modes of GaSb (100) through use of Arsenic (As-2) based in situ etching. Three distinct etch modes result from temperature dependent in situ etching. The authors have used this in situ etch process on highly strained (In)GaSb quantum wells (QWs) and have studied the dependence of the in situ etching on substrate temperature and indium composition in the quantum well. The etched quantum wells are capped with an Al0.5Ga0.5Sb barrier and the photoluminescence properties are studied. The authors observe inhomogeneous broadening indicating the possible presence of quantum-sized features with different shapes and sizes. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3607600]
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