4.3 Article

Single-crystal high entropy perovskite oxide epitaxial films

Journal

PHYSICAL REVIEW MATERIALS
Volume 2, Issue 6, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.2.060404

Keywords

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Funding

  1. Department of Energy
  2. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
  3. Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
  4. Center for Materials Processing, a Tennessee Higher Education Commission (THEC) supported Accomplished Center of Excellence
  5. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4416]
  6. US DOE [DE-AC05-00OR22725]
  7. U.S. Government

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Examples of single-crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO(3) perovskite Ba(Zr-0.2 Sn0.2Ti0.2 Hf-0.2 Nb-0.2)O-3 epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically resolved electron-energy-loss spectroscopy mapping shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties.

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