Related references
Note: Only part of the references are listed.Exceptionally Strong Phonon Scattering by B Substitution in Cubic SiC
Ankita Katre et al.
PHYSICAL REVIEW LETTERS (2017)
Computationally predicted energies and properties of defects in GaN
John L. Lyons et al.
NPJ COMPUTATIONAL MATERIALS (2017)
almaBTE: A solver of the space-time dependent Boltzmann transport equation for phonons in structured materials
Jesus Carrete et al.
COMPUTER PHYSICS COMMUNICATIONS (2017)
Review-Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices
E. Gaubas et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Unraveling the dominant phonon scattering mechanism in the thermoelectric compound ZrNiSn
Ankita Katre et al.
JOURNAL OF MATERIALS CHEMISTRY A (2016)
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Edward A. Jones et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2016)
Orthogonal tight-binding model for the thermal conductivity of Si
Ankita Katre et al.
PHYSICAL REVIEW B (2016)
Phonon Transport Simulator (PhonTS)
Aleksandr Chernatynskiy et al.
COMPUTER PHYSICS COMMUNICATIONS (2015)
First-principles theory of acceptors in nitride semiconductors
John L. Lyons et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Distributions of phonon lifetimes in Brillouin zones
Atsushi Togo et al.
PHYSICAL REVIEW B (2015)
Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
J. Buckeridge et al.
PHYSICAL REVIEW LETTERS (2015)
Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
Shuji Nakamura
REVIEWS OF MODERN PHYSICS (2015)
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z. Zhang et al.
JOURNAL OF APPLIED PHYSICS (2015)
First principles study of thermal conductivity cross-over in nanostructured zinc-chalcogenides
Ankita Katre et al.
JOURNAL OF APPLIED PHYSICS (2015)
Thermal conductivity of bulk GaN-Effects of oxygen, magnesium doping, and strain field compensation
Roland B. Simon et al.
APPLIED PHYSICS LETTERS (2014)
ShengBTE: A solver of the Boltzmann transport equation for phonons
Wu Li et al.
COMPUTER PHYSICS COMMUNICATIONS (2014)
Vacancy-hydrogen complexes in ammonothermal GaN
F. Tuomisto et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Anharmonic force constants extracted from first-principles molecular dynamics: applications to heat transfer simulations
T. Tadano et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2014)
Effect of nitrogen and vacancy defects on the thermal conductivity of diamond: An ab initio Green's function approach
N. A. Katcho et al.
PHYSICAL REVIEW B (2014)
First-principles calculations for point defects in solids
Christoph Freysoldt et al.
REVIEWS OF MODERN PHYSICS (2014)
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
S. Pimputkar et al.
JOURNAL OF CRYSTAL GROWTH (2013)
History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination
Shuji Nakamura et al.
PROCEEDINGS OF THE IEEE (2013)
Thermal Conductivity and Large Isotope Effect in GaN from First Principles
L. Lindsay et al.
PHYSICAL REVIEW LETTERS (2012)
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
John L. Lyons et al.
PHYSICAL REVIEW LETTERS (2012)
Vacancy defects in bulk ammonothermal GaN crystals
F. Tuomisto et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Cluster scattering effects on phonon conduction in graphene
Natalio Mingo et al.
PHYSICAL REVIEW B (2010)
Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy
A. R. Arehart et al.
APPLIED PHYSICS LETTERS (2008)
Three-phonon phase space and lattice thermal conductivity in semiconductors
L. Lindsay et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
Intrinsic lattice thermal conductivity of semiconductors from first principles
D. A. Broido et al.
APPLIED PHYSICS LETTERS (2007)
Nitrogen vacancies as major point defects in gallium nitride
M. G. Ganchenkova et al.
PHYSICAL REVIEW LETTERS (2006)
Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy
S. Hautakangas et al.
PHYSICAL REVIEW B (2006)
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
CG Van de Walle et al.
NATURE (2003)
Some effects of oxygen impurities on AlN and GaN
GA Slack et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering
T Ruf et al.
PHYSICAL REVIEW LETTERS (2001)
Mg-O and Mg-VN defect complexes in cubic GaN
I Gorczyca et al.
PHYSICAL REVIEW B (2000)