Journal
BIOELECTRONICS, BIOMEDICAL, AND BIOINSPIRED SYSTEMS V AND NANOTECHNOLOGY V
Volume 8068, Issue -, Pages -Publisher
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.886552
Keywords
Deep level doping; high resistivity silicon; semi-insulating silicon; coplanar waveguide; attenuation; microwave absorption; resistivity
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Coplanar waveguides fabricated on gold-doped Czochralski-silicon show reduced losses. Gold atoms implanted into silicon substrates compensate for background free carriers introduced by impurities in the material. This leads to an increased silicon resistivity which exhibits lower microwave absorption. High frequency measurements in 1-40 GHz range of coplanar waveguides fabricated on gold-doped silicon show attenuation reductions up to 70%, highlighting the benefits of deep level compensation of shallow level impurities in silicon using gold.
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