dc magnetometry of niobium thin film superconductors deposited using high power impulse magnetron sputtering

We performed a systematic investigation of the dc magnetic properties of superconducting niobium thin films deposited by high power impulse magnetron sputtering (HiPIMS) as a function of the main deposition parameters: the temperature, T, of the heated substrate and the applied dc bias voltage, V, during the sputtering process. The measured dc magnetization curves between 0 and 1000 mT were used to calculate the relative volume of each sample into which the applied magnetic field had penetrated, (Delta V/V)(M). The sample deposited at 700 degrees C with -80 V biased substrate exhibited the least penetration by the magnetic field. (Delta V/V)(M) appeared to be highly dependent on the bias voltage at both room temperature and 500 degrees C; however, a broad range of bias voltages showed comparatively similar results at increased temperatures of 700 degrees C. Samples deposited at 700 degrees C exhibit smaller upper critical fields, H-C2, than samples deposited at room temperature and 500 degrees C, with the lower temperatures exhibiting a greater dependency on the applied bias. The films deposited at 700 degrees C also display a more stable magnetization curve suggesting that an enhanced flux pinning was achieved when compared to lower temperatures. Consequently, films with stable pinning were found to have the most repeatable dc magnetic behavior. Our results are particularly relevant to the superconducting radio-frequency accelerator scientific community where thin films have been suggested as a technology which may ultimately surpass the performance of bulk niobium. They are also relevant to the fundamental area of superconducting thin films and any applied area where thin films produced by HiPIMS are used, such as superconducting electronics.