Journal
IEICE ELECTRONICS EXPRESS
Volume 12, Issue 3, Pages -Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
DOI: 10.1587/elex.12.20141161
Keywords
terahertz oscillators; terahertz communications; resonant tunneling diode; high-frequency direct modulation
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- Industry-Academia Collaborative R&D Program from Japan Science and Technology Agency, Japan
- Strategic Information and Communications R&D Promotion Programme (SCOPE) from Ministry of Internal Affairs and Communications
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We proposed and fabricated resonant-tunneling-diode (RTD) terahertz (THz) oscillators with a structure for high-frequency direct modulation, which is useful for high-capacity THz wireless communications. The oscillator is composed of RTD and slot antenna. To obtain high cut-off frequency of direct modulation, the capacitance of the metal-insulator-metal (MIM) layer forming the slot antenna was reduced without decrease in THz output power which was a problem in the previous structure. A cut-off frequency of 30 GHz was obtained in direct intensity modulation of the device oscillating at 350 GHz with the reduced MIM capacitance of 0.7 pF. Keywords: terahertz oscillators, terahertz communications, resonant tunneling diode, high-frequency direct modulation
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