Journal
ACS ENERGY LETTERS
Volume 3, Issue 7, Pages 1482-1491Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.8b00692
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Funding
- US-India Partnership to Advance Clean Energy-Research (PACE-R) - U.S. Department of Energy (Office of Science) [DE-AC36-08GO28308]
- Government of India, through the Department of Science and Technology [IUSSTF/JCERDC-SERIIUS/2012]
- Singapore National Research Foundation through the Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program
- Ministry of New and Renewable Energy, Government of India
- US-India Partnership to Advance Clean Energy-Research (PACE-R) - U.S. Department of Energy (Office of Basic Energy Sciences) [DE-AC36-08GO28308]
- US-India Partnership to Advance Clean Energy-Research (PACE-R) - U.S. Department of Energy (Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [DE-AC36-08GO28308]
- [NRF-CRP14-2014-03]
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The recent evolution of solution-processed hybrid organic inorganic perovskite-based photovoltaic devices opens up the commercial avenue for high-throughput roll-to-roll manufacturing technology. To circumvent the thermal limitations that hinder the use of metal oxide charge transport layers on plastic flexible substrates in such technologies, we employed a relatively low-power nitrogen plasma treatment to achieve compact SnO2 thin-film electrodes at near room temperature. The perovskite photovoltaic devices thus fabricated using N-2 plasma-treated SnO2 performed on par with thermally annealed SnO2 electrodes and resulted in a power conversion efficiency (PCE) of ca. 20.3% with stabilized power output (SPO) of ca. 19.1% on rigid substrates. Furthermore, the process is extended to realize flexible perovskite solar cells on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates with champion PCE of 18.1% (SPO ca. 17.1%), which retained ca. 90% of its initial performance after 1000 bending cycles. Our investigations reveal that deep ultraviolet irradiation associated with N-2 and N2O plasma emission plays a major role in obtaining good quality metal oxide thin films at lower temperatures and offers promise toward facile integration of a wide variety of metal oxides on flexible substrates.
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