Journal
ACS ENERGY LETTERS
Volume 3, Issue 3, Pages 508-513Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b01279
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Funding
- U.S. Department of Energy, Solar Energy Technologies Office
- Electronic Materials Programs - Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- Office of Science of the U.S. Department of Energy [DE-SC0004993]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- European Research Council (ERC) under the European Union (COLIBRI) [706744]
- Swiss National Science Foundation [NRP70]
- Australian Government through the Australian Research Council [DP150104331]
- Australia-US Institute for Advanced Photovoltaics (AUSIAPV) program [ACAP6.9]
- Marie Curie Actions (MSCA) [706744] Funding Source: Marie Curie Actions (MSCA)
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Development of new device architectures and process technologies is of tremendous interest in crystalline silicon (c-Si) photovoltaics to drive enhanced performance and/or reduced processing cost. In this regard, an emerging concept with a high-efficiency potential is to employ low/high work function metal compounds or organic materials to form asymmetric electron and hole heterocontacts. This Letter demonstrates two important milestones in advancing this burgeoning concept. First, a high-performance, low-temperature, electron selective heterocontact is developed, comprised of a surface passivating a-Si:H layer, a protective TiOx interlayer, and a low work function LiFx/AI outer electrode. This is combined with a MoOx hole-selective heterocontact to demonstrate a cell efficiency of 20.7%, the highest value for this cell class to date. Second, we show that this cell,passes a standard stability test by maintaining >95% of its original performance after 1000 h of unencapsulated damp heat exposure, indicating its potential for longevity.
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