Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 6, Issue 1, Pages 346-353Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2806920
Keywords
Ferroelectric; hafnium-zirconium oxide; negative-capacitance; Landau-Khalatnikov theory; multiple domain
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Funding
- Japan Society and Technology Agency through Precursory Research for Embryonic Science and Technology
- Grants-in-Aid for Scientific Research [16K18085] Funding Source: KAKEN
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We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO2 (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau-Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator.
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