Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 6, Issue 1, Pages 803-807Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2850063
Keywords
Body current; anode hole injection; MOSFET
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Funding
- Ministry of Science and Technology (MOST) Core Facilities Laboratory for Nano-Science and Nano-Technology in Kaohsiung-Pingtung Area
- Ministry of Science and Technology, Taiwan [MOST-106-2112-M-110-008-MY3, MOST 107-2622-8-110-003-TE1]
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This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn I-B) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless, in this paper, the opposite is found in our experiment. Therefore, two different measurement techniques are employed, with the body current attributed to electrons in the inversion layer under the grounded source/drain. This indicates that the dominant mechanism is AHI rather than electron tunneling from the valence band. Moreover, the abn I-B is dominated by tunneling mechanisms because it is independent of temperature.
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