An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs

This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn I-B) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless, in this paper, the opposite is found in our experiment. Therefore, two different measurement techniques are employed, with the body current attributed to electrons in the inversion layer under the grounded source/drain. This indicates that the dominant mechanism is AHI rather than electron tunneling from the valence band. Moreover, the abn I-B is dominated by tunneling mechanisms because it is independent of temperature.