Journal
RESULTS IN PHYSICS
Volume 9, Issue -, Pages 1534-1536Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2018.05.012
Keywords
-
Funding
- Basic Science Research Program through the National Research Foundation of Korea - Ministry of Education [NRF-2016R1D1A1B03932295]
Ask authors/readers for more resources
We report the transport behavior of bilayer graphene grown by thermal chemical vapor deposition. The bilayer graphene films annealed at 700 degrees C in a furnace under Ar atmosphere exhibited transitions from a metal to a semiconductor or insulator, with temperature-dependent resistances. This modulation of electrical properties could be explained by two possible mechanisms: variable range hopping (VRH) and thermally activated (TA) conduction. In particular, Anderson localization was suggested for the metal-insulator (MI) transition in the transport of bilayer graphene, shifting the transition point to room temperature by an increase in the disorder up to 7.5x10(13) cm(-2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available