Journal
RESULTS IN PHYSICS
Volume 10, Issue -, Pages 46-54Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.rinp.2018.05.015
Keywords
SOI LDMOS; Field plate; Variable-k dielectric; Breakdown voltage; Specific ON-resistance
Funding
- National Natural Science Foundation of China [61464003]
- Guangxi Natural Science Foundation of China [2015GXNSFAA139300]
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A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15m Omega . cm(2) to 3.81m Omega . cm(2), the peak value of surface temperature is declined by 38 K.
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