Combining the sol gel method and spin coating to obtain YIG films with low FMR linewidth on silicon (100) substrate

Combining the sol gel method and spin coating technique, yttrium iron garnet (YIG) films were obtained on silicon (Si) substrate. Four YIG films with different thicknesses were fabricated to achieve low FMR linewidth. The x-ray diffraction has shown a single phase, belonging to the cubic structure of the YIG, while the morphology of the films has presented small pores and some grains on the surface. The FMR linewidth of the YIG films decreased 110 Oe, 108 Oe, 93 Oe and 71 Oe as the film thickness increased 134 nm, 246 nm, 376 nm and 489 nm, respectively. This result indicates that high-quality YIG films can be achieved on Si substrates, controlling the thickness. The sol gel method is shown as a very economical and easy alternative to obtain YIG films with low FMR linewidth, which may be important for making microwave integrated devices.