Journal
JOURNAL OF APPLIED CRYSTALLOGRAPHY
Volume 51, Issue -, Pages 368-385Publisher
INT UNION CRYSTALLOGRAPHY
DOI: 10.1107/S1600576718001450
Keywords
scanning X-ray nanodiffraction; lattice bending; graded SiGe microcrystals; strain relaxation
Categories
Funding
- Sinergia project of the Swiss National Science Foundation [NOVIPIX CRSII2_147639]
- MEYS of the Czech Republic under the project CEITEC Nano+ [CZ.02.1.01/0.0/0.0/16_013/0001728]
- project Tecnologie Innovative per i Veicoli Intelligenti ID project - Call 'Accordi per la Ricerca e l'Innovazione' [242092, POR FESR 2014-2020]
- [INGO LG 13058]
- [ED1.1.00/02.0068]
Ask authors/readers for more resources
The scanning X-ray nanodiffraction technique is used to reconstruct the three-dimensional distribution of lattice strain and Ge concentration in compositionally graded Si1-xGex microcrystals grown epitaxially on Si pillars. The reconstructed crystal shape qualitatively agrees with scanning electron micrographs and the calculated three-dimensional distribution of lattice tilt quantitatively matches finite-element method simulations. The grading of the Ge content obtained from reciprocal-space maps corresponds to the nominal grading of the epitaxial growth recipe. The X-ray measurements confirm strain calculations, according to which the lattice curvature of the microcrystals is dominated by the misfit strain, while the thermal strain contributes negligibly. The nanodiffraction experiments also indicate that the strain in narrow microcrystals on 2 x 2 mu m Si pillars is relaxed purely elastically, while in wider microcrystals on 5 x 5 mu m Si pillars, plastic relaxation by means of dislocations sets in. This confirms previous work on these structures using transmission electron microscopy and defect etching.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available