Journal
IEEE ACCESS
Volume 6, Issue -, Pages 4709-4719Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2017.2789248
Keywords
broadband; class-E; delta-sigma; gallium nitride (GaN); lumped element; microstrip; switching-mode
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Funding
- Natural Sciences and Engineering Research Council of Canada
- Alberta Innovates Technology Futures
- Canada Research Chairs Program
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The paper presents a design of a broadband high-efficiency class-E power amplifier ( PA) for the advanced efficiency enhancement architectures applications. A sequential load pull methodology to design broadband class-E power amplifiers using a packaged gallium nitride power transistor is presented. Two different broadband matching synthesis techniques have been proposed using lumped elements have been presented and implemented in the manuscript. A fourth-order low-pass impedance transformation topology is designed as the output matching network to provide the optimum load reflection coefficients in the targeted bandwidth ( 1.8-2.7 GHz). A combination of input and output matching network has been proposed in the manuscript to satisfy the given fractional bandwidth requirements. For practical validation, a Wolfspeed ( Cree) CGH40025 package transistor has been used. Under continuous wave test condition the fabricated PA showed more than 50% power added efficiency ( PAE) with up to 29 W output power for 40% fractional bandwidth from 1.8-2.7 GHz. Furthermore, the proposed broadband Class E PA is deployed in efficiency enhancement architecture like delta-sigma modulation based transmitters. The PA shows more than 48% PAE all over the frequency band when driven with a delta-sigma modulated LTE downlink signal while maintaining high signal quality and PA reliability.
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