4.6 Article

High Efficiency Energy Harvesters in 65nm CMOS Process for Autonomous IoT Sensor Applications

Journal

IEEE ACCESS
Volume 6, Issue -, Pages 2397-2409

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2017.2783045

Keywords

Energy harvesting; radio frequency; GSM900; CMOS process; MOSFET; power conversion efficiency; sensitivity; dickson charge pump; rectifiers; and flip-chip

Funding

  1. Semiconductor Research Corporation
  2. Texas Analog Center of Excellence [MEES1 2011-HJ-2185]

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Two integrated, highly efficient RF-to-dc rectifier circuits are presented. The rectifier circuits are based on improved Dickson charge pump models and are fabricated using 65-nm CMOS GlobalFoundries process. The designs utilize diode-connected metal oxide semiconductor field-effect transistors instead of the conventional Schottky diodes to provide a fully integrated circuits. A detailed analytical model that supports the improved circuit model is given. The measurement results of both rectifier circuits show good agreement with the simulation results. The fabricated rectifiers' start to operate at -17.5-dBm input power. The tested frequency of operation of the rectifier circuits is 953 MHz (GSM900 band), however, other frequency bands such as 2.4 GHz (Bluetooth/WLAN) could be covered with proper impedance matching. The measured peak power conversion efficiency (PCE) of the implemented rectifiers are 84.37% and 56.16% at input power levels of -12.5 and -15 dBm, respectively. To the best of our knowledge, this is the highest achieved PCE for the class of rectifiers at such low input power level in the literature. High sensitivity and excellent PCE of the presented rectifiers are ideal for utilization in wireless sensor network, Internet of Things, energy harvesting, and biomedical applications.

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