Journal
ADVANCED SCIENCE
Volume 5, Issue 7, Pages -Publisher
WILEY
DOI: 10.1002/advs.201800062
Keywords
boron nitride; graphene; Mott-Schottky heterojunctions; photocatalysts
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Funding
- National Natural Science Foundation of China [21720102002, 21722103, 21673140, 21671134]
- Shanghai Basic Research Program [16JC1401600]
- SJTU-MPI partner group
- Shanghai Eastern Scholar Program
- Shanghai Rising-Star Program [16QA1402100]
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Heterojunction photocatalysts at present are still suffering from the low charge separation/transfer efficiency due to the poor charge mobility of semiconductor-based photocatalysts. Atomic-scale heterojunction-type photocatalysts are regarded as a promising and effective strategy to overcome the drawbacks of traditional photocatalysts for higher photoenergy conversion efficiencies. Herein, an atomic-scale heterojunction composed of a boron nitride monolayer and graphene (h-BN-C/G) is constructed to significantly shorten the charge transfer path to promote the activation of molecular oxygen for artificial photosynthesis (exemplified with oxidative coupling of amines to imines). As the thinnest heterojunction, h-BN-C/G gives the highest conversion, which is eightfold higher than that of the mechanical mixture of graphene and boron nitride monolayers. h-BN-C/G exhibits a high turnover frequency value (4.0 mmol benzylamine g(-1) h(-1)), which is 2.5-fold higher than that of the benchmark metal-free photocatalyst in the literature under even critical conditions.
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