Journal
ADVANCED ELECTRONIC MATERIALS
Volume 4, Issue 3, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201700580
Keywords
electrical transport properties; field-effect transistors; PbSe nanorods
Funding
- European Research Council through the ERC Starting Grant Hy-SPOD [306983]
- National Key Research Projects [2016YFA0202402]
- Natural Science Foundation of Jiangsu Province of China [BK20170337]
- National Natural Science Foundation of China [61674111]
- 111 projects
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- China Scholarship Council [201606920064]
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Lead chalcogenides with large exciton Bohr radius display strong quantum confinement, which make them applicable in a wide range of optoelectronic devices such as solar cells and photodetectors. Especially, 1D PbSe nanocrystals attract much attention with their potential for multiple exciton generation. However, very little is known on their charge transport properties. In this study well performing field-effect transistors based on PbSe nanorods with an inorganic iodide-based ligand are presented for the first time. The transistors at room temperature display ambipolar characteristics with electron mobility of approximate to 0.1 cm(2) V-1 s(-1) and hole mobility of 1.1 x 10(-4) cm(2) V-1 s(-1) in the ultraclean environment. Low temperature investigation reveals a transition around 200 K between nearest-neighbor and variable-range hopping mechanism. Below 200 K, the transport properties are dominated by the severe disorder.
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