Journal
2D MATERIALS
Volume 5, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aaa721
Keywords
2D materials; optoelectronics; 2D heterojunctions; photodetector; III-VI layered materials
Categories
Funding
- AFOSR [FA9550-14-1-0268]
- Welch Foundation [C-1716]
- National Key Basic Research Program of China (973 Program) [2013CB632900]
- National Natural Science Foundation of China (NSFC) [61390502, 21373068, 11528407, 11474047]
- Joint Ph.D. Program of the Chinese Scholarship Council (CSC)
- FAME, one of six centers of STARnet
- MARCO
- DARPA
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p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 mu s is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.
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