Journal
2D MATERIALS
Volume 5, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aac615
Keywords
chemical vapor deposition; multilayer hexagonal boron nitride; resistive switching; iron substrate; conductive filament
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Funding
- Ministry of Education of China
- National Natural Science Foundation of China [61502326, 41550110223, 11661131002]
- Jiangsu Government [BK20150343]
- Ministry of Finance of China [SX21400213]
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
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Hexagonal boron nitride (h-BN) is an attractive insulating material for nanoelectronic devices due to its high reliability as dielectric and excellent compatibility with other two dimensional (2D) materials (e.g. graphene, MoS2). Multilayer h-BN stacks have been readily grown on Cu and Pt substrates via chemical vapor deposition (CVD) approach, confirming its potential for wafer scale integration. However, the growth of h-BN on other substrates needs to be also achieved in order to expand the use of this material. Recently, the CVD growth of monolayer h-BN on Fe substrates was reported, but it just focused on material structure characterization. Here we present the first fabrication of electronic devices using multilayer h-BN dielectric stacks grown on Fe foils. We fabricate and characterize resistive switching (RS) devices based on Au/Ag/h-BN/Fe nanojunctions, and observe the coexistence of both volatile and non-volatile RS depending on the electrode to which the bias is applied. The characteristics measured agree well with those simulated via SIM(2)RRAM software and QPC modeling, and the cycle-to-cycle variability is slightly lower than that of transition metal oxide based RS devices.
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