Journal
2D MATERIALS
Volume 5, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aaa1c5
Keywords
molecular beam epitaxy; transition metal disulphide; ultra high vacuum; quasi-freestanding; monolayer; van der Waals; heterostructures
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Funding
- Deutsche Forschungsgemeinschaft (DFG) through the Collaborative Research Center [SFB 1238]
- Cologne University
- Center of Excellence for Advanced Materials and Sensing Devices
- Croatian Science Foundation [IP-2016-06-3211]
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Based on an ultra-high vacuum compatible two-step molecular beam epitaxy synthesis with elemental sulphur, we grow clean, well-oriented, and almost defect-free monolayer islands and layers of the transition metal disulphides MoS2, TaS2 and WS2. Using scanning tunneling microscopy and low energy electron diffraction we investigate systematically how to optimise the growth process, and provide insight into the growth and annealing mechanisms. A large band gap of 2.55 eV and the ability to move flakes with the scanning tunneling microscope tip both document the weak interaction of MoS2 with its substrate consisting of graphene grown on Ir(1 1 1). As the method works for the synthesis of a variety of transition metal disulphides on different substrates, we speculate that it could be of great use for providing hitherto unattainable high quality monolayers of transition metal disulphides for fundamental spectroscopic investigations.
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