Journal
PHYSICAL REVIEW APPLIED
Volume 9, Issue 1, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.9.011002
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Funding
- Office of the Director of National Intelligence (ODNI)
- Intelligence Advanced Research Projects Activity (IARPA) [W911NF-14-C0089]
- NSF
- MRSEC through Cornell Center for Materials Research [DMR-1120296]
- Office of Naval Research
- NSF [ECCS-0335765]
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Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a beta-W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 x 10(6) A/cm(2).
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