Journal
NANOMATERIALS
Volume 8, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/nano8070512
Keywords
p-type InGaN; graded indium composition; hole injection; quantum efficiency; green LED
Categories
Funding
- National High Technology Research and Development Program of China [2014AA032609]
- National Natural Science Foundation of China [61504044]
- Key Technologies R&D Programs of Guangdong Province [2014B0101119002, 2017B010112003]
- Applied technologies R&D Projects of Guangdong Province [2015B010127013, 2016B010123004]
- technologies R&D Programs of Guangzhou City [201504291502518, 201604046021]
- Science and Technology Development Special Fund Projects of Zhangshan City [2017F2FC0002, 2017A1009]
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We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.
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