Journal
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)
Volume 34, Issue 1, Pages 137-142Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3567572
Keywords
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Funding
- AFOSR MURI [FA9550-08-1-0337]
- NSF MRSEC [DMR0520527]
- PECASE [FA9550-091-0482]
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Traditional flexible electronics employ amorphous Si, poly Si and organic materials, but these materials cannot be used for fast (radio-frequency, RF) flexible electronics due to their low carrier mobilities. Instead, we employ monocrystalline Si as the active materials. These high quality materials were released from siliconon-insulator by undercutting the buried oxide layer. They have equivalent mobility values as their bulk counterpart, yet with high mechanical flexibility. We realized the first RF flexible thin-film transistors by performing pre-release doping and changing the transistor fabrication process to gate-after-source/drain to avoid high temperature process on plastic substrate and achieve low source/drain contact resistance. We further increased the device speed with reduced source/drain access resistance through careful device structure design. By realizing smaller feature size (1 mu m) with local gate alignment and higher fidelity membrane registration/transfer technique, 12 GHz flexible thin-film transistors were demonstrated. Strained channel and nanolithography are projected to further increase device speed.
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