Journal
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5
Volume 8, Issue 5, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.201000900
Keywords
MBE; AlN; Si substrate; polarity
Categories
Ask authors/readers for more resources
A fabrication process of an interface reaction epitaxy (IRE) beta-Si3N4 and an IRE AlN were investigated to produce a double buffer layer (DBL) of AlN(0001)/beta-Si3N4/Si(111) for the growth of group III nitrides films on Si. The beta-Si3N4 was formed by using adsorbed (ADS) nitrogen atoms irradiated indirectly from a rf-plasma cell. Two surface structures of the beta-Si3N4, which were 8 x 8 and 8/3 x 8/3 reconstructions, were fabricated by changing the nitrogen irradiation conditions; complete and incomplete nitridation of Si surface and successive heat treatment up to 875 degrees C formed the 8 x 8 and 8/3 x 8/3 structures, respectively. IRE AlN was grown by 1 monolayer of Al deposition on the beta-Si3N4 and successive annealing at 875 degrees C. Al and N polarity DBLs were grown on the 8 x 8 and 8/3 x 8/3 structures, respectively. These results indicated that the polarity of DBL could be controlled by the surface reconstruction of beta-Si3N4. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available