Journal
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Volume 1399, Issue -, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.366391
Keywords
quantum wire; one-dimensional electron transport
Funding
- Engineering and Physical Sciences Research Council
- WCU program through the NRF of Korea - Ministry of Education, Science and Technology [R32-2008-000-10204-0]
- National Research Foundation of Korea [R32-2008-000-10204-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We present transport measurements in quantum wires, where the electronic system separates into two rows in the weakly-confined regime, a result of Coulomb repulsion overcoming the confining potential. This transport regime is marked by a jump in conductance from zero to 4e(2)/h. In wide split-gate devices this double row was seen to be coupled, leading to the creation of bonding and antibonding states. Using back-gated devices we tune the carrier density and show a density-driven transition from single-to double-row transport in the weak confinement regime.
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