4.8 Article

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

Journal

IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 30, Issue 5, Pages 2517-2533

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2014.2373390

Keywords

Fault detection; fault tolerant; insulated-gate bipolar transistor (IGBT) modules; physics-of-failure (PoF); power electronics; reliability

Funding

  1. Korea Institute of Energy Technology Evaluation and Planning - Korea government Ministry of Knowledge Economy [20134030200310]
  2. Basic Science Research Program through the National Research Foundation of Korea - Ministry of Education [2013R1A1A2A10006090]
  3. Korea Evaluation Institute of Industrial Technology (KEIT) [20134030200310] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  4. National Research Foundation of Korea [2013R1A1A2A10006090] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open-and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.

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