Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers

Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.