Journal
SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B
Volume 1349, Issue -, Pages 1081-+Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3606237
Keywords
Dual gate thin film transistor; metal oxide; complementary inverter circuit
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Funding
- National Science Council, Taiwan
- Academia Sinica,Taiwan
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Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.
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