Journal
ATOMIC LAYER DEPOSITION APPLICATIONS 7
Volume 41, Issue 2, Pages 303-314Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3633681
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Funding
- King Abdullah University of Science and Technology (KAUST) [KUS-C1-015-21]
- Swiss National Science Foundation [200020_125163]
- EU FP7 project ORION [NMP-229036]
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- NSERC Solar Network
- NSERC
- Swiss National Science Foundation (SNF) [200020_125163] Funding Source: Swiss National Science Foundation (SNF)
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Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.
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