CRYSTALLIZATION PROCESSES OF AMORPHOUS Si BY THERMAL ANNEALING AND PULSED LASER PROCESSING

Amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by thermal annealing and nanosecond green laser pulses. The Raman scattering spectra show that thermal annealing can provide nearly fully crystallized poly-Si film. Laser crystallization of amorphous Si is more flexible crystallization method, but it is more difficult to reach high levels of crystallinity. Depth studies of laser treated samples reveal a thin amorphous-like interlayer between substrate surface and crystallized Si film.