Journal
ADVANCED MATERIALS INTERFACES
Volume 5, Issue 9, Pages -Publisher
WILEY
DOI: 10.1002/admi.201701607
Keywords
bistetracene; organic semiconductors; polymorphism; solvent vapor annealing
Funding
- National Science Foundation [DMR-1332208, DMR-1508627]
- Division Of Materials Research [1508627] Funding Source: National Science Foundation
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Polymorphism, the ability for a given material to adopt multiple crystalline packing states, is a powerful approach for investigating how changes in molecular packing influence charge transport within organic semiconductors. In this study, a new thin film polymorph of the high-performance, p-type small molecule N-octyldiisopropylsilyl acetylene bistetracene (BT) is isolated and characterized. Structural changes in the BT films are monitored using static and in situ grazing-incidence X-ray diffraction. The diffraction data, combined with simulation and crystallographic refinement calculations, show the molecular packing of the thin film polymorph transforms from a slipped 1D pi-stacking motif to a highly oriented and crystalline film upon solvent vapor annealing with a 2D brick-layer pi-stacking arrangement, similar to the so-called bulk structure observed in single crystals. Charge transport is characterized as a function of vapor annealing, grain orientation, and temperature. Demonstrating that mobility increases by three orders of magnitude upon solvent vapor annealing and displays a differing temperature-dependent mobility behavior.
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