Journal
ACS PHOTONICS
Volume 5, Issue 7, Pages 2631-2637Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.7b01373
Keywords
epsilon-near-zero; conducting oxides; perfect absorber; plasmonics; nanophotonics
Categories
Funding
- Defense Advanced Research Projects Agency [N66001-17-1-4047]
- CAREER Award Program from National Science Foundation [1752295]
- Young Investigator Development Program
- Undergraduate Research and Scholarly Achievement (URSA)
- Baylor University
- Office of the Vice Provost for Research at Baylor University
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1752295] Funding Source: National Science Foundation
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We report perfect light absorption due to the excitation of bound and radiative p-polarized optical modes in epsilon-near-zero (ENZ) conducting oxide nanolayers with thicknesses as thin as lambda(ENZ)/100. Perfect absorption in the wavelength range of 600 nm to 2 mu m may be achieved for unpatterned indium tin oxide (ITO) nanolayers with an electron density of 5 x 10(20) to 2 x 10(21) cm(-3). Multilayer stacks of ITO nanolayers with a gradient of electron densities and optimized thicknesses enable broadband perfect absorption. The postfabrication tuning, of the perfect absorption wavelength, of 32 nm is achieved in a metal-oxide-semiconductor (MOS) geometry with applied voltage of 5 V. Such ultrathin and tunable broadband perfect absorbers have many potential applications in nonlinear flat ENZ optics, thermophotovoltaics, hot-electron generation in the ENZ regime, and other fields.
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