Ultraviolet Random Laser Based on a Single GaN Microwire

Random lasing (RL) from self-constructed localized cavities based on micropits scatters in a single GaN microwire (MW) was investigated. The spectra and spatial resolution of RL exhibits that the lasing modes originated from different regions in the MW. Temperature-dependent lasing measurement of GaN RL shows an excellent characteristic temperature of about 52 K. In addition, the dependence of spatial localized cavities' dimension on the pumping intensity profile and temperature was studied by fast Fourier transform spectroscopy. For GaN RL, the optical feedback was supported by localized paths through the scattering effect of micropits in the MW. The scattering feedback mechanism for RL can avoid the enormous difficulty in fabricating artificial cavity structures for GaN. Hence, the results in this paper represent a low-cost technique to realize GaN-based ultraviolet laser diodes without the fabrication difficulty of cavity facets.