Journal
ACS PHOTONICS
Volume 5, Issue 3, Pages 699-704Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.7b01215
Keywords
AlGaN; near-ultraviolet; laser; Si substrate; stress; defect
Categories
Funding
- National Key RD Program [2016YFB0400100, 2016YFB0400104]
- National Natural Science Foundation of China [61534007, 61404156, 61522407, 61604168, 61775230]
- Key Frontier Scientific Research Program of the Chinese Academy of Sciences [QYZDB-SSW-JSC014]
- Science and Technology Service Network Initiative of the Chinese Academy of Sciences
- Key R&D Program of Jiangsu Province [BE2017079]
- Natural Science Foundation of Jiangsu Province [BK20160401]
- China Postdoctoral Science Foundation [2016M591944]
- State Key Laboratory of Luminescence and Applications [SKLA-2016-01]
- State Key Laboratory on Integrated Optoelectronics [IOSKL2016KF04, IOSKL2016KF07]
- SINANO, CAS [Y5AAQ51001]
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This letter reports a successful fabrication of room-temperature electrically injected AlGaN-based near ultraviolet laser diode grown on Si. An Al-composition step down-graded AlN/AlGaN multilayer buffer was carefully engineered to not only tackle the huge difference in the coefficient of thermal expansion between AlGaN template and Si substrate, but also reduce the threading dislocation density caused by the large lattice mismatch. On top of the crack-free n-AlGaN template, high quality InGaN/AlGaN quantum wells were grown, sandwiched by waveguide and optical cladding layers, for the fabrication of edge-emitting laser diode. A dramatic narrowing of the electroluminescence spectral line width, an elongated far-field pattern, and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing.
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