4.8 Article

Stable and efficient CdS/Sb2Se3 solar cells prepared by scalable close space sublimation

Journal

NANO ENERGY
Volume 49, Issue -, Pages 346-353

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2018.04.044

Keywords

Sb2Se3; Photovoltaics; Stable; Close space sublimation; CZ-TA

Funding

  1. National Natural Science Foundation of China [51602114, 61725401, 51573077]
  2. Major State Basic Research Development Program of China [2016YFA0204000]
  3. special Fund for strategic New Development of Shenzhen, China [JCYJ20160414102210144]
  4. U.S. Department of Energy (DOE) SunShot Initiative under the Next Generation Photovoltaics 3 program [DE-FOA-0000990]
  5. National Science Foundation [CHE1230246, DMR-1534686]
  6. Ohio Research Scholar Program
  7. Jiangsu Province Natural Science Foundation for Distinguished Young Scholars [BK20130032]
  8. Program for new Century Excellent Talents in University [NCET-12-0633]
  9. Priority Academic Program Development of Jiangsu Higher Education Institutions

Ask authors/readers for more resources

Sb2Se3 is a promising candidate for low toxicity, low-cost and high efficiency solar cells. Thin film solar cells employing Sb2Se3 as the absorber have achieved power conversion efficiencies of up to 6.5%. However, these solar cells are typically fabricated using rapid thermal evaporation, a fast deposition technique but suffer from entangled substrate and source temperatures. Here, we report on the fabrication of stable and efficient CdS/Sb2Se3 thin film solar cells using close-space sublimation process, which allows separate control of the source and substrate temperatures. This enables better control of Sb2Se3 film deposition and reduction of interfacial diffusion, leading to higher quality absorber films and improved device heterojunctions. Additionally, we introduced a novel low-cost material 4,4', 4 '', 4 '''-(9-octylcarbazole-1,3,6,8-tetrayl) tetrakis(N, N-bis(4-methoxyphenyl) aniline) (CZ-TA) as the hole transport layer (HTL) to create n-i-p structured devices. This CZ-TA HTL reduced the back contact resistance and promoted photogenerated carrier collection, boosting device photo conversion efficiency to 6.84%.

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