Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 14, Issue 4, Pages 668-672Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2015.2425433
Keywords
Infrared detectors; photodetectors; photoluminescence; quantum dots
Categories
Funding
- Department of Science and Technology, India
- IIT Bombay Nanofabrication Facility
Ask authors/readers for more resources
We report the effects of rapid thermal annealing on the optical, structural, and device properties of 30 layer strain-coupled InAs/GaAs quantum dot infrared photodetectors. Stability in the photoluminescence peak is observed for annealing up to 800 degrees C, which has not been previously reported. Cross-sectional transmission electron microscopy images show preservation of quantum dots is observed up to 800 degrees C. Device with total capping thickness of 150 nm annealed at 750 degrees C exhibit a fivefold enhancement in spectral intensity compared to as-grown devices and increase in the temperature of detector operation is observed from 100 to 140 K from the same device. The annealed devices exhibited a single-order enhancement in peak detectivity compared to as-grown quantum dot infrared photodetector.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available