Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 7, Pages 1600-1617Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc05326f
Keywords
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Funding
- Natural Science Foundation of China [61601305, 61604097]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170302145229928, JCYJ20170302151653768, KQJSCX20170327150812967]
- Guangdong Provincial Department of Science and Technology [2017A010103026]
- Department of Education of Guangdong Province [2015KQNCX141, 2016KTSCX120]
- Natural Science Foundation of SZU
- City University of Hong Kong [7004378]
- Natural Science Foundation of China [61601305, 61604097]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170302145229928, JCYJ20170302151653768, KQJSCX20170327150812967]
- Guangdong Provincial Department of Science and Technology [2017A010103026]
- Department of Education of Guangdong Province [2015KQNCX141, 2016KTSCX120]
- Natural Science Foundation of SZU
- City University of Hong Kong [7004378]
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Since the discovery of perovskite materials with the general chemical formula ABX(3) in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field.
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