Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 13, Pages 3220-3225Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc05679f
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Funding
- European Union [644631]
- Academy of Finland [305450]
- Academy of Finland (AKA) [305450, 305450] Funding Source: Academy of Finland (AKA)
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This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from similar to 0.03 cm(2) (V s)(-1) to similar to 3.0 cm(2) (V s)(-1). The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.
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