4.6 Review

Development of fullerenes and their derivatives as semiconductors in field-effect transistors: exploring the molecular design

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 14, Pages 3514-3537

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc05079h

Keywords

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Funding

  1. Shenzhen Key Laboratory of Organic Optoelectromagnetic Functional Materials of Shenzhen Science and Technology Plan [ZDSYS20140509094114164]
  2. Shenzhen Peacock Program [KQTD2014062714543296]
  3. Nanshan Innovation Agency Grant [KC2015ZDYF0016A]
  4. Guangdong Key Research Project [2014B090914003, 2015B090914002]
  5. Natural Science Foundation of Guangdong Province [2014A030313800]
  6. Guangdong Academician Workstation [2013B090400016]
  7. Shenzhen Engineering Laboratory of Development and Reform Commission of Shenzhen Municipality [(2016) 1592]
  8. Pakistan Science Foundation (PSF) - National Natural Science Foundation of China (NSFC) Collaborative Project [51761145101]

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Fullerenes and their derivatives applied in organic field-effect transistors (OFETs), as semiconductors, have been extensively studied over the past two decades and recently a lot of progress has been made. Relevant reports are widely collected here and a systematic classification of these reported compounds is sorted afterwards. This review describes the effect of these compounds on OFET device performance, especially on mobility and stability. The topic focuses on the relationship between the chemical structure and device performance. The preparation and synthesis of each classified compound is also introduced briefly. Other indispensable performances, such as the on-off ratio, threshold voltage, device process and test, etc., are also presented and discussed.

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