Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 6, Issue 2, Pages 565-573Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ta08071a
Keywords
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Funding
- DFG via the GrK (Research training group) [2204]
- Spanish Ministry of Economy and Competitiveness, through the amp
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- Severo Ochoaamp
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- Programme for Centres of Excellence in Ramp
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- D [SEV-2015-0496]
- COST (European Cooperation in Science and Technology)
- Programa Internacional de Becas amp
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- la Caixaamp
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- -Severo Ochoa
- Generalitat de Catalunya [2014 SGR 1638]
- Spanish MINECO e-TNT [MAT2014-59961-C2-2-R]
- Severo Ochoa Program (MINECO) [SEV-2013-0295]
- CERCA Programme/Generalitat de Catalunya
- Emmy-Noether program of the German Research Foundation DFG [MA 5392/3-1]
- Ramon y Cajal program [RYC-2013-12448]
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An experimental strategy for systematically assessing the influence of surface passivation layers on the photocatalytic properties of nanowire photoanodes by combining photocurrent analysis, photoluminescence spectroscopy and high resolution transmission electron microscopy with a systematic variation of sample structure and the surrounding electrolyte is demonstrated. Following this approach we can separate the impact on recombination and transport processes of photogenerated carriers. We apply this strategy to analyze the influence of ultra-thin TiO2, CeO2 and Al2O3 coatings deposited by atomic layer deposition on the photoelectrochemical performance of InxGa1-xN/GaN nanowire (NW) photoelectrodes. The passivation of surface states results in an increase of the anodic photocurrent (PC) by a factor of 2.5 for the deposition of 5 nm TiO2. In contrast, the PC is reduced for CeO2- and Al2O3-coated NWs due to enhanced defect recombination in the passivation layer or increased band discontinuities. Furthermore, photoelectrochemical oxidation of the InxGa1-xN/GaN NW photoelectrode is attenuated by the TiO2 layer and completely suppressed for a layer thickness of 7 nm or more. Due to efficient charge transfer from the InxGa1-xN NW core a stable TiO2-covered photoanode with visible light excitation is realized.
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