4.6 Article

Oxygen vacancies on the surface of HxWO3-y for enhanced charge storage

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 6, Issue 16, Pages 6780-6784

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ta00981c

Keywords

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Funding

  1. Natural Science Foundation of Zhejiang Province, China [LZ18B060002]
  2. National Natural Science Foundation of China [21622308, 91534114]
  3. Fundamental Research Funds for the Central Universities [2017XZZX002-16]

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The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective HxWO3-y with that of WO3 and bulk defective e-HxWO3-y. It shows that surface OVs are key hot spots for faradaic reactions in HxWO3-y, which promotes the formation of certain W5+ and W4+ during the reduction process.

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