Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 8, Issue 2, Pages 201-208Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2017.2788202
Keywords
Adhesive bonding; high-resistivity silicon (HR-Si); terahertz (THz) dielectric waveguide
Funding
- Natural Sciences and Engineering Research Council of Canada
- C-COM Satellite Systems Inc.
Ask authors/readers for more resources
A silicon-BCB-quartz (SBQ) terahertz (THz) dielectric waveguide is proposed, investigated, fabricated, and verified experimentally. In this structure, silicon and quartz are bonded using a thin adhesive layer, benzocyclobutene (BCB). The fabrication process of this new waveguide, which is very simple and can be performed using basic clean room facilities, is presented. To demonstrate the performance of the proposed waveguide structure, a number of samples are designed, fabricated, and measured for the 500-580 GHz frequency range. Using the proposed structure, a THz waveguide with losses as low as 0.026 dB/lambda(0) is achieved for the mentioned frequency range. Moreover, an SBQ bend is designed, fabricated, and the measurement results are presented. The proposed structure is low loss, efficient, easy-to-fabricate, and presents a platform for numerous dielectric-based THz passive and active devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available