Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 8, Issue 2, Pages 373-388Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2797106
Keywords
Charge carrier lifetime; contacts; crystalline silicon (c-Si); passivation; photovoltaic (PV) cells
Funding
- Top consortia for Knowledge and Innovation Solar Energy programs COMPASS, RADAR, and AAA of the Ministry of Economic Affairs of The Netherlands
- Netherlands Organisation for Scientific Research under the Dutch TTW-VENI [15896]
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To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
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