Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 7, Issue 4, Pages P158-P160Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0061804jss
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Funding
- Program of Basic Research of the Presidium of the RAS NANOSTRUCTURES: PHYSICS, CHEMISTRY, BIOLOGY, BASIS OF TECHNOLOGIES
- Ministry for Education and Science (Russian Federation) [16.2811.2017/4.6]
- Ministry of Education and Science of Ukraine [0115U002261]
- Program of Russian Academy of Science Nanostructures
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The paper is devoted to the growth of thin SiC films by the method of substitution of atoms on macro-and mesoporous substrates of p-and n-type silicon of (100) orientation. On the mesoporous Si (100) substrates polycrystalline 3C-SiC films were formed, the crystallite size determined from XRD patterns was 27.5 nm. The obtained structures are studied by the methods of scanning electron and atomic-force microscopy, micro-Raman spectroscopy and X-ray diffraction analysis. (C) 2018 The Electrochemical Society.
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