Journal
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI
Volume 8278, Issue -, Pages -Publisher
SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.909377
Keywords
GaN; nanowire; nanorod; LED; laser; solid-state lighting; top-down; chemical vapor deposition
Ask authors/readers for more resources
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of similar to 250kW/cm(2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available