Journal
SILICON
Volume 11, Issue 2, Pages 973-981Publisher
SPRINGER
DOI: 10.1007/s12633-018-9894-0
Keywords
Leakage current; Silicon on insulator (SOI); Selective buried oxide (SELBOX); Subthreshold swing; Tunnel field effect transistor (TFET); Band to band tunneling (BTBT)
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This paper proposes a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate. An extensive simulation study and a comparative performance analysis of the key characteristics of the proposed geometry of TFET on SELBOX substrate and the conventional fully depleted silicon-on-insulator (FDSOI) TFETs have been done. It has been found that SELBOX can significantly reduce the OFF current, without affecting the ON current of the device; hence, higher order of I-ON/I-OFF ratio (10(10)) can be obtained prevailing the advantages of FDSOI TEFTs.
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