4.7 Article

Bipolar Conduction as the Possible Origin of the Electronic Transition in Pentatellurides: Metallic vs Semiconducting Behavior

Journal

PHYSICAL REVIEW X
Volume 8, Issue 2, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevX.8.021055

Keywords

-

Funding

  1. National Key R&D Program of China [2018YFA0305700, 2014CB921500]
  2. National Science Foundation of China [11574377]
  3. Key Research Program of Frontier Sciences
  4. Strategic Priority Research Program of the Chinese Academy of Sciences [QYZDB-SSW-SLH013, XDB07020100]
  5. Department of Energy, Basic Energy Sciences, through the MAGICS Center [DE-SC0014607]
  6. U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
  7. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4416]

Ask authors/readers for more resources

The pentatellurides ZrTe5 and HfTe5 are layered compounds with one-dimensional transition-metal chains that show a not-yet-understood temperature-dependent transition in transport properties as well as recently discovered properties suggesting topological semimetallic behavior. Here, we report magnetotransport properties for two kinds of ZrTe5 single crystals grown with the chemical vapor transport (CVT) and the flux method (Flux), respectively. They show distinct transport properties at zero field: The CVT crystal displays a metallic behavior with a pronounced resistance peak and a sudden sign reversal in thermopower at approximately 130 K, consistent with previous observations of the electronic transition; in striking contrast, the Flux crystal exhibits a semiconducting-like behavior at lowtemperatures and a positive thermopower over the whole temperature range. For both samples, strong effects on the transport properties are observed when the magnetic field is applied along the orthorhombic b and c axes, i.e., perpendicular to the chain direction. Refinements on the single-crystal x-ray diffraction and the measurements of energy dispersive spectroscopy reveal the presence of noticeable Te vacancies in the CVT samples, while the Flux samples are close to the stoichiometry. Analyses on the magnetotransport properties confirm that the carrier densities of the CVT sample are about two orders higher than those of the Flux sample. Our results thus indicate that the widely observed anomalous transport behaviors in pentatellurides actually take place in the Te-deficient samples. For the stoichiometric pentatellurides, our electronic structure calculations show narrow-gap semiconducting behavior, with different transport anisotropies for holes and electrons. For the degenerately doped n-type samples, our transport calculations can result in a resistivity peak and crossover in thermopower fromnegative to positive at temperatures close to those observed experimentally due to a combination of bipolar effects and different anisotropies of electrons and holes. Our present work resolves the long-standing puzzle regarding the anomalous transport behaviors of pentatellurides, as well as the electronic structure in favor of a semiconducting state.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available