Journal
MRS COMMUNICATIONS
Volume 8, Issue 3, Pages 865-870Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrc.2018.94
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Funding
- Fundacao para Ciencia e Tecnologia (FCT) [IF/00133/2015]
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme [715027]
- FEDER funds through the COMPETE 2020 Program
- FCT - Portuguese Foundation for Science and Technology [UID/CTM/50025/2013]
- Erasmus + program
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Robust evidences are presented showing that the Raman mode around 250 cm(-1) in the Sb2Se3 thin films does not belong to this binary compound. The laser power density dependence of the Raman spectrum revealed the formation of Sb2O3 for high values of laser intensity power density excitation under normal atmospheric conditions. To complement this study, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing. Both these measurements showed that the Sb2Se3 compound can be replaced by Sb2O3. A heat-assisted chemical process explains these findings. Furthermore, Raman conditions required to perform precise measurements are described.
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